ECSE Homework 3 Solution

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Problem 4 (14pts): A novel inverter has the transfer characteristics shown in P3. What are the values of VIL , VIH , VOL , and VOH that give best noise margins? What are these high and low noise margins? Problem 5 (14pts): Find the rising and falling propagation delays of an unloaded AND-OR-INVERT (AOI21) gate…

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Problem 4 (14pts): A novel inverter has the transfer characteristics shown in P3. What are the values of VIL , VIH , VOL , and VOH that give best noise margins? What are these high and low noise margins?

Problem 5 (14pts): Find the rising and falling propagation delays of an unloaded AND-OR-INVERT (AOI21) gate using the Elmore delay model. Estimate the diffusion capacitance based on a stick diagram of the layout.

Problem 6 (14pts): Find the worst-case Elmore parasitic delay of an n-input NOR gate.

Problem 7 (14pts): Size the gate, in P4, so that it has the same drive strength as an inverter with pMOS transistor width=3 and an nMOS transistor width=2.

P4

ECSE Homework 3 Solution
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